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NTD6600NT4G

Part No NTD6600NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 12A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.28W (Ta), 56.6W (Tc)
Maximum Rds On at Id,Vgs 146 mOhm @ 6A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 209346-NTD6600NT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD6600NT4G CAD Model

Description

The ON Semiconductor NTD6600NT4G is a high-performance N-Channel Power MOSFET designed to meet the rigorous requirements of today's advanced electronic circuits. This power MOSFET is particularly suitable for applications that require efficient power management, such as power supplies, converters, motor drives, and other power-intensive applications.

Key Features

  • High Current Capability: The NTD6600NT4G is capable of handling continuous drain currents up to 30A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical R<sub>DS(on) of just 13.8mΩ, this MOSFET ensures minimal power loss and improved efficiency.
  • High Switching Speed: Fast switching speeds are achieved thanks to the optimized gate charge, enhancing performance in switching applications.
  • High Voltage Tolerance: It can withstand drain-source voltages up to 30V, providing a good margin for voltage spikes and surges commonly found in industrial environments.
  • Robust Thermal Performance: The NTD6600NT4G is designed to operate reliably even at elevated temperatures, with a maximum junction temperature of 175°C.

Applications

  • DC/DC Converters
  • Power Supply Modules
  • Motor Control Circuits
  • Automotive Applications
  • Power Management Solutions

Package and Reliability

The NTD6600NT4G comes in a compact DPAK (TO-252) package, which is ideal for space-constrained applications. The package is designed for optimal thermal conduction, ensuring the device operates within its specified temperature range. ON Semiconductor's commitment to quality means that this MOSFET is manufactured to the highest standards, providing reliable performance even under the most demanding conditions.

Environmental Compliance

ON Semiconductor is dedicated to environmental stewardship. The NTD6600NT4G is compliant with RoHS (Restriction of Hazardous Substances) directives, ensuring that it is free from harmful substances such as lead, mercury, and cadmium. This commitment to sustainability makes it an environmentally responsible choice for your power management needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5640 $62.5600
95+ $1.2834 $121.9230
140+ $1.2432 $174.0480
195+ $1.2032 $234.6240
250+ $1.1630 $290.7500
335+ $1.0427 $349.3045
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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