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NTD78N03-35G

Part No NTD78N03-35G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 11.4A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 11.4A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 35nC @ 4.5V
Max Input Capacitance 2250pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta), 64W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 78A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 060630-NTD78N03-35G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTD78N03-35G CAD Model

Description

The NTD78N03-35G is a high-performance Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet a wide range of applications, boasting features that emphasize efficiency, reliability, and thermal management.

Key Features:

  • High Current Capacity: With a continuous drain current of 78A, the NTD78N03-35G is capable of handling high-power applications with ease.
  • Low R<sub>DS(on): The device offers an ultra-low on-resistance of 3.5 mΩ at 10 V, minimizing power losses and improving overall efficiency.
  • High-Temperature Operation: Engineered for reliability, it can operate at temperatures up to 175°C, making it suitable for demanding environments.
  • Robust Package: Encased in a TO-252 (DPAK) package, it provides a compact solution with a footprint that is ideal for space-constrained applications.

Applications:

The NTD78N03-35G is versatile for use in various applications, such as:

  • DC/DC Converters
  • Power Management Functions
  • Motor Drives
  • Automotive Systems
  • Switching Regulators

Technical Specifications:

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 30 V Continuous Drain Current (I<sub>D) 78 A Power Dissipation (P<sub>D) 125 W R<sub>DS(on) 3.5 mΩ Operating Temperature -55°C to +175°C

With its robust design and superior electrical characteristics, the NTD78N03-35G Power MOSFET from ON Semiconductor is an excellent choice for designers looking for a high-efficiency, high-performance solution for their power management needs.

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