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NTD85N02RT4

Part No NTD85N02RT4
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 12A DPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 12A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 17.7nC @ 5V
Max Input Capacitance 2050pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.25W (Ta), 78.1W (Tc)
Maximum Rds On at Id,Vgs 5.2 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 004191-NTD85N02RT4
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTD85N02RT4 CAD Model

Description

ON Semiconductor NTD85N02RT4 Power MOSFET

The ON Semiconductor NTD85N02RT4 is a high-performance Power MOSFET designed for a wide range of applications requiring efficient power management and high current handling capabilities. This device is part of ON Semiconductor's renowned NTD series, which is known for its reliability and efficiency in power conversion and management tasks.

The NTD85N02RT4 features a robust and durable design, with a maximum continuous drain current (I<sub>D) of 85A, making it suitable for demanding applications that require a high current throughput. It operates at a maximum drain-to-source voltage (V<sub>DSS) of 24V, which allows it to handle moderate voltage levels while maintaining low on-resistance (R<sub>DS(on)) for improved power efficiency.

With an R<sub>DS(on) as low as 2.5mΩ, the NTD85N02RT4 ensures minimal power loss during operation, contributing to the overall efficiency of the system it is integrated into. This low on-resistance is particularly beneficial in applications such as DC/DC converters, motor drives, and power management circuits where efficiency is a critical factor.

The device is housed in a TO-252 (DPAK) package, which is designed for surface-mount technology (SMT) and provides excellent thermal performance. This packaging enables the MOSFET to dissipate heat effectively, ensuring reliable operation even under high power and temperature conditions. The NTD85N02RT4 also features a logic level gate drive, which simplifies the drive circuitry and reduces the overall system complexity.

Additionally, the NTD85N02RT4 is characterized by its fast switching speed, which is essential for reducing switching losses in high-frequency power switching applications. This capability makes it an ideal choice for modern power supply designs that require fast and efficient switching performance.

In summary, the ON Semiconductor NTD85N02RT4 Power MOSFET is a versatile and high-performance component that is well-suited for a range of applications requiring efficient power management, high current handling, and fast switching capabilities. Its robust design and thermal efficiency make it a reliable choice for engineers and designers looking to enhance their power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5518 $57.9390
260+ $0.4528 $117.7280
395+ $0.4387 $173.2865
545+ $0.4245 $231.3525
705+ $0.4104 $289.3320
945+ $0.3679 $347.6655
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,200 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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