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NTE4151PT1G

Part No NTE4151PT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 20V 0.76A 3-Pin SC-89 T/R / MOSFET P-CH 20V 0.76A SC-89
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 760mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 2.1nC @ 4.5V
Max Input Capacitance 156pF @ 5V
Maximum Gate-Source Voltage ±6V
Power Dissipation (Max) 313mW (Tj)
Maximum Rds On at Id,Vgs 360 mOhm @ 350mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-3
Dimension SC-89, SOT-490
Win Source Part Number 004202-NTE4151PT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name NTE4151P
Introduction Date August 25, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian NTE4151PT1G CAD Model

Description

ON Semiconductor NTE4151PT1G - P-Channel Enhancement Mode Field Effect Transistor

The NTE4151PT1G is a high-performance, P-Channel Enhancement Mode Field Effect Transistor (FET) designed and manufactured by the industry-leading company, ON Semiconductor. This FET is an essential component for modern electronic applications requiring efficient power management and control with a focus on energy-saving and compact design solutions.

Constructed with ON Semiconductor's advanced technology, the NTE4151PT1G provides users with an exceptional combination of low on-state resistance and minimal gate charge, leading to reduced conduction and switching losses. This makes it an ideal choice for a variety of power applications, including load switches, power management devices, and other battery-operated systems where efficiency is paramount.

The device features a compact SOT-416 (SC-75) surface-mount package, making it suitable for space-constrained applications. Its small footprint does not compromise its performance, as it can handle continuous drain currents up to 230 mA and has a low threshold voltage, ensuring it can be driven by low-voltage logic signals. The NTE4151PT1G operates effectively over a broad voltage range, providing designers with flexibility in various circuit configurations.

Key specifications of the NTE4151PT1G include:

  • Drain-Source Voltage (Vds): -20V
  • Continuous Drain Current (Id): -230 mA
  • Gate-Source Voltage (Vgs): ±8V
  • Power Dissipation (Pd): 300 mW
  • Low On-Resistance (Rds(on)): 7.5 Ohm at Vgs = -4.5V
  • High-Speed Switching Performance
  • ESD Protected Gate

ON Semiconductor's commitment to environmental sustainability is evident in the NTE4151PT1G, which is not only RoHS compliant but also halogen-free. This ensures that the product meets current environmental standards and regulations, reducing the ecological footprint of electronic devices.

In conclusion, the NTE4151PT1G from ON Semiconductor is a high-performance, energy-efficient P-Channel FET that is perfect for designers looking to optimize their power management solutions. Its robust performance, coupled with its environmental compliance, makes it a smart choice for a wide range of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,060+ $0.0473 $50.1380
2,580+ $0.0388 $100.1040
3,990+ $0.0376 $150.0240
5,495+ $0.0364 $200.0180
7,105+ $0.0352 $250.0960
9,525+ $0.0315 $300.0375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 56,685 pieces
MOQ: 1060 pcs
Order Increment : 1 pcs
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