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NTF3055L175T3G

Part No NTF3055L175T3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2A SOT223
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 10nC @ 5V
Max Input Capacitance 270pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 175 mOhm @ 1A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223 (TO-261)
Dimension TO-261-4, TO-261AA
Win Source Part Number 1083878-NTF3055L175T3G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTF3055L175T3G CAD Model

Description

The NTF3055L175T3G is a high-performance, N-channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is a testament to ON Semiconductor's commitment to providing power management solutions that offer both efficiency and reliability for a wide range of applications.

Key Features

  • Drain-to-Source Voltage (V<sub>DS): 60V - This voltage rating allows the MOSFET to handle moderate power levels, making it suitable for a variety of switching applications.
  • Continuous Drain Current (I<sub>D): 1.75A - The device can sustain a continuous current of 1.75A, which is adequate for low to medium power applications.
  • Low R<sub>DS(on): This feature signifies low on-state resistance, which translates to reduced power loss and improved efficiency during operation.
  • Power Dissipation (P<sub>D): 2.5W - The MOSFET can dissipate up to 2.5 watts of power, which is indicative of its ability to handle thermal stresses in active mode.
  • Fast Switching Speed: The device is designed for fast switching, which reduces transition losses and improves performance in high-frequency applications.
  • Temperature Range: Operational over a wide temperature range, ensuring reliability in various environmental conditions.
  • Package: Supplied in an SOT-223 package which is compact and suitable for surface-mount technology (SMT), aiding in miniaturization of the end product.

Applications

The NTF3055L175T3G is versatile and can be used in a range of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Powered Devices
  • Motor Control Systems
  • Load/Power Switching
  • Consumer Electronics

With its robust feature set, the NTF3055L175T3G from ON Semiconductor is an excellent choice for designers looking for a reliable and efficient power switching solution. Its performance characteristics make it a go-to component for applications demanding high efficiency and power density.

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