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NTHC5513T1G

Part No NTHC5513T1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 1206A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.9A, 2.2A
Maximum Rds On at Id,Vgs 80 mOhm @ 2.9A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 4nC @ 4.5V
Max Input Capacitance 180pF @ 10V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package ChipFET
Win Source Part Number 025764-NTHC5513T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTHC5513T1G CAD Model

Description

The ON Semiconductor NTHC5513T1G is a high-performance, Power MOSFET designed to deliver efficient power conversion in a compact form factor. This device is part of ON Semiconductor's extensive range of energy-efficient power management components, engineered to meet the stringent requirements of modern electronic applications.

Key Features:

  • Low On-Resistance: The NTHC5513T1G boasts an incredibly low on-resistance, which significantly reduces power loss during operation, making it ideal for high-efficiency power supply designs.
  • High-Temperature Performance: With an ability to operate effectively at high temperatures, this MOSFET is suitable for demanding environments, ensuring reliability and longevity of the application it is used in.
  • Compact Footprint: The small surface-mount package allows for a more compact design in space-constrained applications, without compromising on power or thermal performance.
  • Fast Switching Speed: This component is designed for fast switching applications, providing improved performance in converters and power management circuits.
  • Low Gate Charge: The MOSFET's low gate charge ensures minimal power loss during the switching process, which enhances the overall efficiency of the device.

Applications:

The versatility of the NTHC5513T1G makes it an excellent choice for a wide range of applications, including:

  • DC/DC Converters
  • Power Supply Modules
  • Motor Control Systems
  • Computing and Server Power Management
  • Telecommunication Equipment
  • Automotive Electronics

Quality and Reliability:

ON Semiconductor is committed to the highest standards of quality and reliability. The NTHC5513T1G MOSFET is manufactured with state-of-the-art technology and is subjected to rigorous testing to ensure it meets the requirements of the most challenging applications. As a result, customers can expect consistent performance and dependability from this component.

In summary, the NTHC5513T1G from ON Semiconductor is a superior choice for designers seeking to enhance efficiency, reduce footprint, and ensure reliability in their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.2782 $52.7820
24+ $4.3309 $103.9416
36+ $4.1955 $151.0380
50+ $4.0602 $203.0100
64+ $3.9249 $251.1936
86+ $3.5188 $302.6168
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,260 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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