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NTHL040N65S3F

Part No NTHL040N65S3F
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 65A TO247-3 / N-Channel 650 V 65A (Tc) 446W (Tc) Through Hole TO-247-3
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series SuperFET® III
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id 5V @ 6.5mA
Gate Charge (Qg) (Max) @ Vgs 158 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 5940 pF @ 400 V
Power Dissipation (Max) 446W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number NTHL040
Standard Package 30
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1349695-NTHL040N65S3F
Ultra Librarian 3D Model Ultra Librarian NTHL040N65S3F CAD Model

Description

ON Semiconductor NTHL040N65S3F SiC MOSFET

The ON Semiconductor NTHL040N65S3F is a high-performance, 650V, N-channel SiC (Silicon Carbide) MOSFET designed for a variety of applications that demand high efficiency, fast switching, and robustness. This MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, which are specifically engineered to reduce energy consumption and improve system reliability in power conversion systems.

Key Features

  • High Blocking Voltage: With a 650V drain-to-source voltage (V<sub>DS), this MOSFET is suitable for high voltage applications, offering a wide safety margin for design flexibility.
  • Low On-Resistance: The device features an ultra-low on-resistance (R<sub>DS(on)) of 40 mΩ, which translates to reduced conduction losses and improved overall efficiency in power applications.
  • High-Speed Switching: The NTHL040N65S3F is optimized for fast switching, which is essential for minimizing switching losses in applications such as switch-mode power supplies and inverters.
  • High-Temperature Operation: Silicon Carbide technology enables this MOSFET to operate at higher temperatures than traditional silicon devices, offering enhanced performance under thermal stress.
  • Reduced Parasitic Inductances: The package is designed with minimized parasitic inductances, which is beneficial for high-speed switching and reduces the risk of parasitic turn-on.

Applications

The NTHL040N65S3F SiC MOSFET is ideal for a range of applications, including:

  • Power Supply Units (PSUs)
  • Electric Vehicle (EV) Chargers
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • High-Frequency Power Converters

Reliability and Performance

ON Semiconductor's commitment to quality ensures that the NTHL040N65S3F MOSFET delivers consistent performance and reliability. The device's robustness is further supported by its ability to handle high surge currents and its inherent ruggedness against harsh electrical environments. This makes it a reliable choice for designers looking to create efficient and durable power conversion systems.

With its combination of high voltage capability, low on-resistance, and fast switching performance, the NTHL040N65S3F from ON Semiconductor represents a sophisticated solution for modern power electronics challenges.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $22.5186 $67.5558
6+ $18.4768 $110.8608
9+ $17.8994 $161.0946
12+ $17.3220 $207.8640
15+ $16.7446 $251.1690
20+ $15.0124 $300.2480
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Availability: 10,000 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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