The NTHL082N65S3F, from ON Semiconductor, is a high-performance power MOSFET designed for various power applications. This N-channel MOSFET utilizes ON Semiconductor's state-of-the-art silicon technology to provide superior switching performance and high thermal stability. It is an ideal choice for high-efficiency power management tasks in a wide range of electronic devices.

Key Features

• Voltage Rating: The NTHL082N65S3F operates at a drain-to-source voltage (V<sub>DS) of 650V, making it suitable for high-voltage applications.
• Current Capacity: With a continuous drain current (I<sub>D) of 82A, this MOSFET can handle significant power, suitable for heavy-duty operations.
• Low R<sub>DS(on): It features a low on-state resistance of typically 8.7 mΩ, which enhances its efficiency by minimizing conduction losses.
• Fast Switching Speed: The device has a fast switching speed, which is essential for reducing switching losses and improving performance in high-frequency applications.
• High Thermal Stability: The MOSFET is designed to maintain its performance over a wide temperature range, ensuring reliability in various operating conditions.

Applications

The NTHL082N65S3F is versatile and can be used in a range of applications, including:

• Power supplies for servers, telecom, and industrial use
• Electric vehicle (EV) charging stations
• Solar power inverters
• Uninterruptible power supplies (UPS)
• High-power DC/DC converters

Package and Quality

This MOSFET is offered in a TO-247 package, which is known for its high power dissipation capabilities. ON Semiconductor's commitment to quality ensures that the NTHL082N65S3F meets the stringent requirements of the industrial and automotive industries, providing reliability and performance that engineers can trust.