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NTJD3158CT1G

Part No NTJD3158CT1G
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET N/P-CH 20V SOT-363 / Mosfet Array 20V 630mA, 820mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 630mA, 820mA
Rds On (Max) @ Id, Vgs 375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V
Power - Max 270mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number NTJD31
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 649827-NTJD3158CT1G
Ultra Librarian 3D Model Ultra Librarian NTJD3158CT1G CAD Model

Description

ON Semiconductor NTJD3158CT1G Dual P-Channel Power MOSFET

The NTJD3158CT1G is a high-performance dual P-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This compact and efficient MOSFET is an ideal choice for a wide range of applications, offering power management solutions that emphasize energy savings and reliability.

Constructed with advanced trench technology, the NTJD3158CT1G provides an excellent R<sub>DS(on) performance which results in lower conduction losses. This feature is particularly beneficial in applications where high efficiency is paramount. The device is housed in a small 6-Pin TSOP package (Case 318G), which is designed to save space on the PCB while still delivering robust power handling capabilities.

The NTJD3158CT1G boasts a dual P-Channel configuration, which allows for a more compact design in applications requiring two P-Channel MOSFETs. This can simplify the circuit design by reducing the number of components and potentially lowering the overall system cost. With a drain-source voltage (V<sub>DSS) of -20 V and a continuous drain current (I<sub>D) of -3 A, this MOSFET can handle significant power for its size.

ON Semiconductor has designed the NTJD3158CT1G with a gate-source threshold voltage (V<sub>GS(th)) that ensures a low gate drive requirement, making it compatible with a wide range of drive circuits and controllers. This feature simplifies the integration of the MOSFET into various designs, including portable and battery-powered devices, where power conservation is crucial.

Key applications for the NTJD3158CT1G include power management in portable electronics, battery management systems, load switch applications, and other situations where a high-efficiency, low-profile P-Channel MOSFET is needed. Its reliability and performance make it a suitable choice for designers looking to optimize their power management strategies in compact electronic devices.

Overall, the NTJD3158CT1G from ON Semiconductor is a testament to the company's commitment to providing innovative, energy-saving components that do not compromise on performance or reliability, making it an excellent choice for modern electronic applications.

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