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NTJD4105CT2G

Part No NTJD4105CT2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V/8V SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V, 8V
Continuous Drain Current at 25°C 630mA, 775mA
Maximum Rds On at Id,Vgs 375 mOhm @ 630mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 3nC @ 4.5V
Max Input Capacitance 46pF @ 20V
Maximum Power Dissipation 270mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 025775-NTJD4105CT2G
Family Name NTJD4105C
Introduction Date January 19, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTJD4105CT2G CAD Model

Description

The ON Semiconductor NTJD4105CT2G is a high-performance, dual N-Channel Power MOSFET designed to deliver efficient power management and switching. This compact semiconductor device is an ideal choice for a wide range of applications that require low on-resistance and high switching speeds.

Key Features

  • Low On-Resistance: The NTJD4105CT2G boasts an exceptionally low on-resistance, which enhances its efficiency by minimizing power loss during operation.
  • High-Speed Switching: Engineered for rapid switching, this MOSFET supports high-frequency operations, making it suitable for power supply and conversion systems.
  • Dual N-Channel Configuration: The dual N-Channel setup provides flexibility in design, allowing for independent control of two N-Channel MOSFETs within a single package.
  • Power Saving: With its low threshold voltage, the device ensures low power consumption, contributing to energy-saving in electronic circuits.
  • Compact Surface-Mount Package: The NTJD4105CT2G comes in a small, leadless package (ChipFET), which is perfect for space-constrained applications.
  • RoHS Compliant: This product complies with the RoHS directive, ensuring it is free from hazardous substances and is environmentally friendly.

Applications

The versatility of the NTJD4105CT2G makes it suitable for a variety of applications, including:

  • Power Management in Portable Devices
  • DC/DC Converters
  • Battery Management Systems
  • Load/Power Switching
  • Motor Control Circuits

Technical Specifications

The NTJD4105CT2G offers a drain-source voltage (Vdss) of 20V, a continuous drain current (Id) of 3.0A, and a power dissipation of 1.25W. Its low gate threshold voltage (Vgs(th)) enhances its performance in low-voltage applications. The device operates over a wide temperature range, ensuring reliability under various environmental conditions.

For engineers and designers looking for an efficient and reliable solution for their power switching needs, the ON Semiconductor NTJD4105CT2G stands out as a top choice, offering high performance in a compact and environmentally friendly package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
295+ $0.1703 $50.2385
720+ $0.1397 $100.5840
1,110+ $0.1354 $150.2940
1,530+ $0.1310 $200.4300
1,975+ $0.1266 $250.0350
2,645+ $0.1135 $300.2075
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 75,000 pieces
MOQ: 295 pcs
Order Increment : 1 pcs
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