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NTLJS4149PTBG

Part No NTLJS4149PTBG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2.7A 6WDFN  /  P-Channel 30 V 2.7A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
Datasheet
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Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 62mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 960 pF @ 15 V
Power Dissipation (Max) 700mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 6-WDFN (2x2)
Package / Case 6-WDFN Exposed Pad
Base Product Number NTLJS41
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 2156-NTLJS4149PTBG-ONTR-ND,ONSONSNTLJS4149PTBG,2156-NTLJS4149PTBG
Standard Package 3,000
Win Source Part Number 1012536-NTLJS4149PTBG
Ultra Librarian 3D Model Ultra Librarian NTLJS4149PTBG CAD Model

Description

The ON Semiconductor NTLJS4149PTBG is a cutting-edge, high-performance P-Channel Power MOSFET designed to meet the demanding requirements of modern electronic circuits. This device is part of ON Semiconductor's PowerTrench® series, which is renowned for providing low on-resistance and minimal gate charge, resulting in highly efficient power management within compact form factors.

Key Features

  • Low On-Resistance: The NTLJS4149PTBG boasts an extremely low on-resistance, which translates into reduced conduction losses and improved overall efficiency in applications.
  • High Power Dissipation: With an impressive power dissipation capability, this MOSFET can handle significant power levels, making it suitable for high-power applications.
  • Enhanced Gate Charge Performance: The device features a refined gate charge performance that ensures faster switching speeds, which is crucial for power conversion applications.
  • Small Footprint: The compact size of the NTLJS4149PTBG allows for a smaller PCB layout, which is essential for space-constrained applications.
  • Robust Thermal Management: It is designed with an excellent thermal performance in mind, ensuring reliability even under high-temperature operating conditions.

Applications

The NTLJS4149PTBG is ideal for a wide range of applications, including but not limited to:

  • Power management for portable devices
  • DC/DC converters
  • Load switches
  • Battery management systems
  • Motor control circuits

Technical Specifications

Parameter Value V<sub>DS (Drain-Source Voltage) -20 V I<sub>D (Continuous Drain Current) -3.6 A R<sub>DS(on) 54 mΩ Package 6-Lead SuperSOT™-6

The NTLJS4149PTBG from ON Semiconductor is a versatile and efficient solution for designers looking to optimize their power management systems with a reliable and robust P-Channel MOSFET.

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