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NTMD5838NLR2G

Part No NTMD5838NLR2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Power MOSFET 30 V, 11.6 A, N−Channel, SO−8 Optimized Gate Charge
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 7.4A
Rds On (Maximum) @ Id, Vgs 25 mOhm @ 7A, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 785pF @ 20V
Power - Max 2.1W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Package 8-SOIC
Win Source Part Number 1232536-NTMD5838NLR2G
Manufacturer Homepage www.onsemi.com
Family Name NTMD5838NL
Introduction Date April 19, 2011
ECCN EAR99
Country of Origin United States of America
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTMD5838NLR2G CAD Model

Description

The NTMD5838NLR2G from ON Semiconductor is a high-performance, dual N-channel Power MOSFET designed to deliver efficient power management and switching. This device is part of ON Semiconductor's extensive range of power MOSFETs that offer industry-leading performance for a wide array of applications.

Key Features

  • Low RDS(on): The NTMD5838NLR2G boasts a low on-resistance, which minimizes conduction losses and improves overall efficiency, making it ideal for power-sensitive applications.
  • High Continuous Drain Current: With a high continuous drain current (ID), this MOSFET can handle significant power without overheating, ensuring reliability in demanding situations.
  • Low Gate Charge (Qg): A low gate charge enables faster switching speeds, which is crucial for high-frequency applications and reduces switching losses.
  • Dual MOSFET Configuration: The dual N-channel configuration allows for compact designs by integrating two independent MOSFETs in one package, saving space and simplifying PCB layout.

Applications

The NTMD5838NLR2G is suitable for a variety of applications, including:

  • DC/DC converters
  • Power management for computing and telecom systems
  • Motor drives and controllers
  • Load switches
  • Battery management systems

Product Specifications

The NTMD5838NLR2G features advanced technical specifications that ensure optimal performance:

  • Voltage Rating (VDS): 30V
  • Current Rating (ID): 8A
  • Power Dissipation (PD): 2.5W
  • Package: Small and efficient SOIC-8 package

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly solutions. The NTMD5838NLR2G is RoHS compliant and free from hazardous substances, aligning with global environmental standards.

Conclusion

The NTMD5838NLR2G from ON Semiconductor represents a blend of performance, efficiency, and compact design. Whether for power regulation, motor control, or battery management, this dual N-channel Power MOSFET is an excellent choice for designers looking to enhance system reliability and efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9699 $53.3445
130+ $0.7959 $103.4670
195+ $0.7710 $150.3450
270+ $0.7461 $201.4470
350+ $0.7213 $252.4550
465+ $0.6466 $300.6690
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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