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NTMFS4821NT1G

Part No NTMFS4821NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.8A SO-8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.8A (Ta), 58.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 16nC @ 4.5V
Max Input Capacitance 1400pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 870mW (Ta), 38.5W (Tc)
Maximum Rds On at Id,Vgs 6.95 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN, 5 Leads
Win Source Part Number 025801-NTMFS4821NT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMFS4821NT1G CAD Model

Description

ON Semiconductor NTMFS4821NT1G N-Channel Power MOSFET

The ON Semiconductor NTMFS4821NT1G is a high-performance, N-Channel Power MOSFET designed to address the demanding requirements of power regulation in modern electronic applications. This device is a testament to ON Semiconductor's commitment to providing energy-efficient power management solutions. It is ideal for a wide range of applications, including power supplies, DC-DC converters, motor drives, and other power switching applications that require a combination of low on-resistance and high switching performance.

Constructed with advanced PowerTrench® technology, the NTMFS4821NT1G offers an optimal balance of low on-state resistance (RDS(on)) and reduced gate charge (Qg), leading to improved efficiency and thermal performance. This technology ensures that the MOSFET can handle high current and power levels while minimizing losses due to conduction and switching, thus enhancing overall system reliability.

The device features a maximum continuous drain current (ID) of 17 A, allowing it to handle significant power without overheating. With a maximum drain-source voltage (VDSS) of 30 V, it can be used in systems with moderate voltage requirements. The MOSFET's low threshold voltage ensures that it can be easily driven by logic-level voltages, making it compatible with a variety of control circuits and microcontrollers.

The NTMFS4821NT1G comes in a compact, surface-mountable 5 mm x 6 mm Power 56 Flat No-Lead package, which is optimal for space-constrained applications. The package is RoHS compliant and designed for easy integration into PCBs, offering excellent thermal resistance and a low profile.

Key Features:

  • Advanced PowerTrench® technology for low RDS(on)
  • Maximum Drain-Source Voltage (VDSS): 30 V
  • Continuous Drain Current (ID): 17 A
  • Low gate charge (Qg) for fast switching
  • High performance in a compact 5 mm x 6 mm footprint
  • RoHS compliant and environmentally friendly

The NTMFS4821NT1G from ON Semiconductor is a robust and efficient solution for designers seeking to improve power density and efficiency in their systems. Its performance and features make it an excellent choice for both new designs and as a drop-in replacement in existing applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
525+ $0.1103 $57.9075
1,280+ $0.0906 $115.9680
1,975+ $0.0878 $173.4050
2,725+ $0.0849 $231.3525
3,520+ $0.0822 $289.3440
4,710+ $0.0736 $346.6560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,400 pieces
MOQ: 525 pcs
Order Increment : 1 pcs
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