ON Semiconductor NTMFS4982NFT1G Overview
The NTMFS4982NFT1G from ON Semiconductor is a high-performance, Power MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This N-channel MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, offering low on-resistance and high switching performance, making it an ideal choice for power supply designers looking to optimize their systems for both performance and energy consumption.
Key Features
- Low RDS(on): The device boasts an exceptionally low on-resistance, which minimizes conduction losses and improves overall efficiency in power conversion circuits.
- High Continuous Drain Current (ID): With the capability to handle a high continuous drain current, the NTMFS4982NFT1G is suitable for demanding applications that require robust current handling.
- High Maximum Junction Temperature: The MOSFET can operate at high temperatures, ensuring reliability and performance even under thermal stress.
- Fast Switching Speed: The device's fast switching capabilities reduce switching losses and improve performance in high-frequency power conversion applications.
- RoHS Compliant: The NTMFS4982NFT1G is compliant with RoHS standards, which restricts the use of certain hazardous substances in electronic equipment.
Applications
The NTMFS4982NFT1G is versatile and can be used in a variety of applications, including:
- DC/DC converters
- Power supply modules
- Motor drives
- Computing and server power systems
- Automotive applications
- Telecommunication equipment
Product Specifications
| Parameter |
Value |
| Configuration |
Single |
| Channel Mode |
Enhancement |
| Channel Type |
N-Channel |
| Drain-Source Breakdown Voltage (VDS) |
30V |
| Continuous Drain Current (ID) |
30A |
| RDS(on) |
8 mΩ |
| Power Dissipation (PD) |
3.8W |
| Operating Temperature Range |
-55°C to +150°C |
With its robust package and high-performance characteristics, the NTMFS4982NFT1G is a reliable and efficient solution for designers looking to improve power density and efficiency in their electronic designs.