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NTMFS4C027NT1G

Part No NTMFS4C027NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16.4A/52A 5DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 50 Weeks
Features N-Channel 30 V 16.4A (Ta), 52A (Tc) 2.51W (Ta), 25.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Manufacturer ON Semiconductor
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerTDFN, 5 Leads
Case / Package 5-DFN (5x6) (8-SOFL)
Family Name NTMFS4
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 1500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 887778-NTMFS4C027NT1G
Ultra Librarian 3D Model Ultra Librarian NTMFS4C027NT1G CAD Model

Description

ON Semiconductor NTMFS4C027NT1G MOSFET

The NTMFS4C027NT1G is a high-performance, N-channel Power MOSFET from ON Semiconductor, known for its efficiency and reliability in a variety of power management and switching applications. This product is designed to meet the rigorous demands of modern electronic circuits, providing a combination of low on-resistance and high switching speed, making it an ideal choice for high-efficiency power conversion and regulation tasks.

With a compact footprint, the NTMFS4C027NT1G is housed in a space-saving 5x6mm flat lead package, specifically a leadless SO-8FL (Single Outline No Leads) package, which offers excellent thermal performance and is suitable for high-density circuit designs. The device is RoHS compliant and is designed with the environment in mind, adhering to current green standards in electronics manufacturing.

Key features of the NTMFS4C027NT1G include:

  • Low On-Resistance: The MOSFET features an exceptionally low drain-to-source on-resistance of just 2.7 mΩ, which minimizes conduction losses and enhances overall efficiency.
  • High Continuous Drain Current: It supports a high continuous drain current of up to 300A, making it capable of handling high current applications with ease.
  • High-Temperature Operation: This device can operate effectively over a wide temperature range, maintaining stability and performance even under thermal stress.
  • Fast Switching Speed: The fast switching capability ensures minimal losses during power conversion processes, contributing to the overall responsiveness and efficiency of the system.
  • Robust Body Diode: It includes a robust and fast body diode, which is an essential feature for applications requiring efficient reverse recovery characteristics.

Applications for the NTMFS4C027NT1G are diverse, ranging from power supply units, DC-DC converters, and motor drives to computing systems, lighting solutions, and automotive electronics. Its high efficiency and power density make it a go-to choice for engineers looking to optimize their power management designs.

ON Semiconductor's commitment to quality ensures that the NTMFS4C027NT1G MOSFET not only meets industry standards but also exceeds them, providing a reliable and durable component for advanced electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6303 $59.8785
200+ $0.5897 $117.9400
305+ $0.5693 $173.6365
440+ $0.5287 $232.6280
570+ $0.5084 $289.7880
715+ $0.4880 $348.9200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 68,110 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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