The ON Semiconductor NTMFS4C800NT1G is a high-performance, N-channel Power MOSFET that is designed to cater to a wide range of power management and switching applications. This device is part of ON Semiconductor's portfolio of energy-efficient power MOSFETs, which are known for their low on-resistance and high switching speed.

Key Features

• Low R<sub>DS(on): The device features an ultra-low on-resistance of 1.35 mΩ at V<sub>GS = 10 V, which helps in reducing power losses and improving overall efficiency in applications.
• High Continuous Drain Current: With a continuous drain current (I<sub>D) of 235 A, this MOSFET can handle high current loads, making it suitable for demanding power applications.
• Power Dissipation: It has a power dissipation of 125 W, ensuring reliable operation even at higher power levels.
• High Switching Speed: The fast switching capability of the NTMFS4C800NT1G makes it ideal for high-frequency power switching applications.
• Single Pulse Avalanche Energy Rated: Its ruggedness is demonstrated by its avalanche energy rating, ensuring durability against high-energy pulses.

Applications

The NTMFS4C800NT1G is versatile and can be used in a variety of applications, including:

• DC/DC Converters
• Power Supply for Servers
• Motor Drives
• Automotive Applications
• Power Management in Portable Devices

Physical Characteristics

The device is housed in a compact, surface-mount package (5x6 mm², 8-Pin DFN), which is designed for optimal thermal performance and space-saving on PCBs. Its lead-free and RoHS compliant design makes it an environmentally friendly choice for modern electronic devices.

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The NTMFS4C800NT1G is subjected to rigorous testing and quality control measures to ensure reliable performance in the field. Its robust design is aimed at providing a long operational lifespan, making it a trusted choice for engineers and designers looking for a high-efficiency power MOSFET solution.