ON Semiconductor NTMFS4H013NFT1G Product Overview

The ON Semiconductor NTMFS4H013NFT1G is a cutting-edge N-channel Power MOSFET that delivers high performance in a wide range of applications. This MOSFET is designed to handle high currents and voltages with great efficiency, making it an ideal choice for power management tasks in various electronic devices.

Key Features

• High Current Capability: The NTMFS4H013NFT1G supports continuous drain currents (I<sub>D), allowing it to handle high-power applications with ease.
• Low R<sub>DS(on): It features a low on-state resistance, which minimizes power losses and improves overall efficiency.
• High Switching Speed: With fast switching capabilities, this MOSFET is suitable for high-frequency power switching applications.
• Robust Thermal Performance: The NTMFS4H013NFT1G is encapsulated in a compact, thermally efficient package that helps to dissipate heat effectively, enhancing the reliability and longevity of the component.

Applications

This versatile MOSFET can be used in a variety of applications, including:

• DC/DC converters
• Power supply units
• Motor control circuits
• Computing and server systems
• Automotive electronics
• Telecommunications equipment

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 30V Continuous Drain Current (I<sub>D) 300A On-State Resistance (R<sub>DS(on)) 0.0013Ω Power Dissipation (P<sub>D) 125W Operating Temperature Range -55°C to +175°C

The NTMFS4H013NFT1G MOSFET from ON Semiconductor represents a reliable and efficient solution for designers looking to improve power management systems in their next-generation electronic products.