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Same model may have multiple batches, images only for reference.
IRF6678TR1PBF
Same model may have multiple batches, images only for reference.

IRF6678TR1PBF

Part No IRF6678TR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A DIRECTFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 65nC @ 4.5V
Max Input Capacitance 5640pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 30A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 119103-IRF6678TR1PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6678TR1PBF CAD Model

Description

The Infineon Technologies IRF6678TR1PBF is an N-channel MOSFET that is designed to provide high power dissipation and low Rds On @ Id, Vgs.

  • Status: This IC is obsolete and has a relatively medium popularity in the market
  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 119103-IRF6678TR1PBF

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Availability: 2,000 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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