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NTMFS4H02NT1G

Part No NTMFS4H02NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 37A/193A 5DFN / N-Channel 25 V 37A (Ta), 193A (Tc) 3.13W (Ta), 83W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Reel - TR
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 37A, 193A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2651 pF @ 12 V
Power Dissipation (Max) 3.13W, 83W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Case / Package 8-PowerTDFN, 5 Leads
Base Product Number NTMFS4
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number ONSONSNTMFS4H02NT1G,2156-NTMFS4H02NT1G-OS
Standard Package 1,500
Win Source Part Number 1324718-NTMFS4H02NT1G
Ultra Librarian 3D Model Ultra Librarian NTMFS4H02NT1G CAD Model

Description

NTMFS4H02NT1G - ON Semiconductor

The NTMFS4H02NT1G is a cutting-edge N-channel Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet the rigorous demands of modern electronic applications, providing high efficiency, reliability, and performance. It is ideal for a wide range of power management tasks in various electronic devices.

Features:

  • Low RDS(on): The NTMFS4H02NT1G features a low on-resistance, which minimizes conduction losses and enhances the overall efficiency of the system in which it is used.
  • High Current Capability: This MOSFET can handle high continuous drain currents, making it suitable for applications that require robust current handling capabilities.
  • High Performance: With fast switching speeds, the NTMFS4H02NT1G is able to operate efficiently in high-frequency power conversion applications.
  • Power Dissipation: It has a high power dissipation rating, which ensures that the device can handle significant amounts of power without overheating.
  • Compact Footprint: The small and compact size of the NTMFS4H02NT1G makes it an excellent choice for space-constrained applications.

Applications:

  • DC/DC Converters
  • Power Supply Modules
  • Motor Drives
  • Computer Servers
  • Telecommunication Equipment

Specifications:

The NTMFS4H02NT1G operates with a 40V drain-source voltage (VDS), a continuous drain current (ID) of up to 80A, and features a maximum power dissipation (PD) of 48W. Its low threshold voltage ensures that the MOSFET can be driven at lower voltages, which is beneficial for battery-operated devices.

Quality and Reliability:

ON Semiconductor is committed to providing high-quality products. The NTMFS4H02NT1G is no exception and is manufactured to meet stringent industry standards for performance and reliability. It is RoHS compliant, ensuring that it meets current environmental standards by avoiding the use of hazardous substances.

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