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NTMS3P03R2G

Part No NTMS3P03R2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2.34A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 750pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 730mW (Ta)
Maximum Rds On at Id,Vgs 85 mOhm @ 3.05A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 060679-NTMS3P03R2G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMS3P03R2G CAD Model

Description

The ON Semiconductor NTMS3P03R2G is a high-performance P-Channel Power MOSFET that offers efficient power management for a wide range of applications. This MOSFET is designed using advanced PowerTrench technology, which ensures optimal performance in terms of switching speed, thermal characteristics, and overall efficiency.

Key Features

  • Low R<sub>DS(on): This device boasts a low on-state resistance, which minimizes power loss and improves efficiency during operation.
  • High Switching Speed: The NTMS3P03R2G is optimized for fast switching, making it suitable for high-frequency power switching applications.
  • Thermal Performance: With an excellent thermal performance, this MOSFET can handle higher currents and operate at elevated temperatures without compromising reliability.
  • Voltage Rating: It is rated for a drain-source voltage (V<sub>DSS) of -30V, which is ideal for a variety of medium-voltage applications.
  • Current Capacity: The device supports a continuous drain current (I<sub>D) of -3.0A, ensuring robust performance for a wide range of loads.
  • Package: It comes in a compact SO-8 package, which is suitable for space-constrained applications while providing excellent power dissipation.

Applications

The NTMS3P03R2G is a versatile component that can be used in various applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Management Systems
  • Load Switches
  • Motor Control Circuits

Product Specifications

Parameter Value R<sub>DS(on) 55 mΩ V<sub>DSS -30 V I<sub>D -3.0 A Package SO-8

With its robust construction and advanced features, the ON Semiconductor NTMS3P03R2G Power MOSFET is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.3400 $61.7000
12+ $10.1247 $121.4964
18+ $9.8083 $176.5494
25+ $9.4918 $237.2950
32+ $9.1753 $293.6096
43+ $8.2271 $353.7653
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,700 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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