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NTMSD3P303R2G

Part No NTMSD3P303R2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2.34A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 750pF @ 24V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 730mW (Ta)
Maximum Rds On at Id,Vgs 85 mOhm @ 3.05A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1083949-NTMSD3P303R2G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMSD3P303R2G CAD Model

Description

ON Semiconductor NTMSD3P303R2G Overview

The NTMSD3P303R2G is a high-performance, Power MOSFET from ON Semiconductor, designed to deliver efficient power management and conversion for a wide range of applications. This device is part of ON Semiconductor's Power MOSFET portfolio, which is known for its reliability, efficiency, and high-speed switching capabilities.

Key Features

  • Low On-Resistance: The NTMSD3P303R2G boasts a very low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses and enhances overall efficiency.
  • High Current Capacity: This MOSFET is capable of handling high continuous drain currents, making it suitable for demanding power applications.
  • Reduced Gate Charge: A lower gate charge (Q<sub>G) means that less energy is required for switching, leading to faster switching speeds and reduced power dissipation.
  • Single P-Channel Device: As a P-channel device, it allows for simpler drive circuitry in high-side switch configurations compared to N-channel MOSFETs.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process technology is used to optimize the device for low voltage operation, enhancing its performance and reliability.

Applications

The NTMSD3P303R2G is ideal for a variety of applications, including:

  • Power supply circuits
  • DC/DC converters
  • Battery management systems
  • Load switches
  • Motor control circuits

Environmental and Quality Certifications

ON Semiconductor is committed to environmental stewardship and product quality. The NTMSD3P303R2G complies with various industry standards, ensuring both performance and sustainability. These include:

  • Pb-Free and RoHS compliant
  • Halogen-free component

Package and Availability

The NTMSD3P303R2G is available in a compact, surface-mount package, allowing for efficient use of PCB space and ease of integration into various electronic assemblies. It is also available in tape and reel packaging, facilitating automated manufacturing processes.

With its combination of efficiency, power handling, and fast switching, the NTMSD3P303R2G from ON Semiconductor is an excellent choice for designers looking to optimize their power management solutions.

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