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NTMT045N065SC1

Part No NTMT045N065SC1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description SILICON CARBIDE (SIC) MOSFET - 3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1310417-NTMT045N065SC1
Category Discrete Semiconductor Products >Transistors >FETs, MOSFETs Single FETs, MOSFETs
Mfr onsemi
Packaging  Tape & Reel (TR) Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 50mOhm @ 25A, 18V
Ultra Librarian 3D Model Ultra Librarian NTMT045N065SC1 CAD Model

Description

  • Typ. RDS(on)= 33 m @ VGS = 18 V Typ. RDS(on)= 45 m @ VGS = 15 V 
  • Ultra Low Gate Charge (QG(tot) = 105 nC) 
  • Low Effective Output Capacitance (Coss = 162 pF) 
  • 100% Avalanche Tested 
  • TJ = 175°C 
  • RoHS Compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $17.8450 $53.5350
7+ $14.6421 $102.4947
11+ $14.1845 $156.0295
15+ $13.7270 $205.9050
19+ $13.2694 $252.1186
26+ $11.8967 $309.3142
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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