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NTMYS014N06CLTWG

Part No NTMYS014N06CLTWG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 12A/36A 4LFPAK / N-Channel 60 V 12A (Ta), 36A (Tc) 3.8W (Ta), 37W (Tc) Surface Mount LFPAK4 (5x6)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) , 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta) , 37W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK4 (5x6)
Package / Case SOT-1023, 4-LFPAK
Base Product Number NTMYS014
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1349905-NTMYS014N06CLTWG
Ultra Librarian 3D Model Ultra Librarian NTMYS014N06CLTWG CAD Model

Description

ON Semiconductor NTMYS014N06CLTWG Overview

The NTMYS014N06CLTWG is a high-performance N-channel Power MOSFET from ON Semiconductor, designed to deliver efficiency and power density in various applications. This device is part of ON Semiconductor's extensive portfolio of energy-efficient power management solutions, and it is engineered to meet the stringent demands of modern electronic circuits.

Key Features

  • Low On-Resistance (R<sub>DS(on)): The NTMYS014N06CLTWG boasts a very low on-resistance, which minimizes conduction losses and enhances overall efficiency. This feature makes it suitable for high-efficiency power supplies and DC-DC converters.
  • High Continuous Drain Current (I<sub>D): With a robust continuous drain current rating, this MOSFET can handle high current applications with ease, making it ideal for motor control, computing, and telecommunication systems.
  • High-Speed Switching: The fast switching capabilities of the NTMYS014N06CLTWG ensure reduced switching losses, which is critical for high-frequency power conversion applications.
  • Low Gate Charge (Q<sub>G): A low gate charge facilitates faster switching speeds and requires less drive power, contributing to the overall efficiency of the system.
  • Robust Thermal Performance: The NTMYS014N06CLTWG is designed with an optimal thermal footprint that ensures reliable performance even under high-temperature operating conditions.

Applications

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Power Inverter Systems
  • Motor Drives and Controllers
  • Computing and Server Power Systems
  • Telecommunication Equipment

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NTMYS014N06CLTWG is no exception. It is manufactured to the highest standards, ensuring reliable performance and longevity. The device comes encapsulated in a compact, surface-mount package that is both durable and space-efficient, making it a versatile choice for modern, compact designs.

Environmental Compliance

The NTMYS014N06CLTWG complies with RoHS and is free from environmentally hazardous substances. This compliance reflects ON Semiconductor's dedication to environmental sustainability and the production of eco-friendly products.

In summary, the NTMYS014N06CLTWG from ON Semiconductor is a state-of-the-art power MOSFET that offers exceptional performance, high reliability, and environmental consciousness, making it a top choice for designers and engineers in various high-demand applications.

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