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NTP125N02RG

Part No NTP125N02RG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 15.9A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 15.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 28nC @ 4.5V
Max Input Capacitance 3440pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.98W (Ta), 113.6W (Tc)
Maximum Rds On at Id,Vgs 4.6 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1083958-NTP125N02RG
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTP125N02RG CAD Model

Description

Introducing the NTP125N02RG MOSFET from ON Semiconductor

The NTP125N02RG is a state-of-the-art MOSFET device designed by ON Semiconductor, a company renowned for its innovative approach in the semiconductor industry. This high-performance product is engineered to provide efficient power management and conversion in a wide range of applications. Its robust design is tailored for those seeking reliability and energy efficiency in their electronic designs.

Key Features

  • Low On-Resistance: The NTP125N02RG boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency. This feature is particularly beneficial in applications where power conservation is crucial.
  • High Current Capability: With the ability to handle high currents, this MOSFET is an excellent choice for power-intensive applications. Its design ensures that it can support the demanding current requirements of modern electronic circuits.
  • Optimized Gate Charge: The device features an optimized gate charge (Q<sub>G), which ensures fast switching performance. This characteristic is vital for applications that require quick response times and high-frequency operation.
  • Advanced Technology: Manufactured using ON Semiconductor's advanced Trench technology, the NTP125N02RG is designed to offer superior performance while minimizing on-state resistance and maximizing power density.

Applications

The versatility of the NTP125N02RG makes it suitable for a broad spectrum of applications, including:

  • DC/DC converters
  • Power supply circuits
  • Motor drives
  • Automotive systems
  • Switching regulators
  • Load switch applications

Product Specifications

The NTP125N02RG operates as an N-channel MOSFET with a drain-to-source voltage (V<sub>DSS) of 20V, and it is capable of conducting a continuous drain current (I<sub>D) of 125A. The device is housed in a compact and durable TO-220 package, which provides excellent thermal performance and is suitable for through-hole mounting, making it easy to integrate into various circuit designs.

ON Semiconductor's commitment to quality ensures that the NTP125N02RG MOSFET meets the highest standards of performance and reliability. Whether you're designing power management systems for consumer electronics or industrial machinery, the NTP125N02RG is engineered to deliver exceptional results.

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.2195 $58.1675
645+ $0.1802 $116.2290
995+ $0.1744 $173.5280
1,370+ $0.1686 $230.9820
1,775+ $0.1629 $289.1475
2,365+ $0.1467 $346.9455
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 85,000 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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