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NTP5862NG

Part No NTP5862NG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V TO-220-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 98A (Tc)
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 82nC @ 10V
Max Input Capacitance 6000pF @ 25V
Maximum Rds On at Id,Vgs 5.7 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1083980-NTP5862NG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTP5862NG CAD Model

Description

The ON Semiconductor NTP5862NG is a high-performance Power MOSFET designed to meet the demanding needs of a wide range of applications. This MOSFET is a part of ON Semiconductor's advanced power technology portfolio, which is focused on delivering efficient, robust, and reliable power management solutions.

The NTP5862NG is characterized by its low on-resistance and high switching speed, making it an ideal choice for high-efficiency power supplies, motor controls, and other power conversion applications. The device operates at a continuous drain current of 80A, with a pulsed drain current capability of up to 320A, providing ample headroom for applications with high transient loads.

With a maximum drain-source voltage (V<sub>DS) of 60V, the NTP5862NG can comfortably handle the voltages typically found in automotive, industrial, and telecommunication systems. The device's low gate charge (Q<sub>G) and gate resistance (R<sub>G) contribute to reduced switching losses, leading to improved overall efficiency in power conversion circuits.

Built with ON Semiconductor's advanced trench technology, the NTP5862NG features a single N-channel configuration and comes in a TO-220 package, known for its robustness and excellent thermal performance. This packaging allows for effective heat dissipation, ensuring reliable operation even under high-temperature conditions.

The NTP5862NG also includes a range of built-in protection features, such as an integrated diode for fast recovery, which helps to protect the device and the surrounding circuitry from the damaging effects of inductive load switching. These features, combined with the high-quality construction expected from ON Semiconductor, make the NTP5862NG a durable and dependable component for any power management task.

In summary, the ON Semiconductor NTP5862NG Power MOSFET is a versatile and efficient solution for engineers looking to optimize their power management systems. With its high current handling, low on-resistance, and fast switching capabilities, it stands as a component of choice for those seeking to enhance system performance while maintaining energy efficiency.

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