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Same model may have multiple batches, images only for reference.
SI7409ADN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7409ADN-T1-E3

Part No SI7409ADN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 7A 1212-8 / Trans MOSFET P-CH 30V 7A 8-Pin PowerPAK 1212 T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type P
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Vgs(th) (Maximum) @ Id 1.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 40nC @ 4.5V
Vgs (Maximum) ±12V
Power Dissipation (Maximum) 1.5W (Ta)
Rds On (Maximum) @ Id, Vgs 19 mOhm @ 11A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK 1212-8
Package PowerPAK 1212-8
Win Source Part Number 794314-SI7409ADN-T1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name Si7409ADN
Introduction Date January 24, 2005
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI7409ADN-T1-E3 CAD Model

Description

The Vishay Siliconix Si7409ADN-T1-E3 is a high-quality electronic component designed for use in various applications.

  • PowerPAK 1212-8 Type of MOSFET: PowerPAK 1212-8
  • Current-Continuous Drain: 7A @ 25°C
  • Maximum Operating Temperature Range: -55°C to 150°C
  • Package Type: reel
  • Mounting Type: SMD
  • Technology: TrenchFET
  • P-channel Type of MOSFET: P-channel
  • Maximum Power Dissipation: 1.5W @ Ta

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