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NTP65N02R

Part No NTP65N02R
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 7.6A TO220AB
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 7.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 9.5nC @ 4.5V
Max Input Capacitance 1330pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.04W (Ta), 62.5W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1083990-NTP65N02R
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTP65N02R CAD Model

Description

ON Semiconductor NTP65N02R Power MOSFET

The ON Semiconductor NTP65N02R is a high-performance Power MOSFET designed to meet the rigorous demands of a variety of applications, ranging from power supply circuits to motor drives. This N-channel MOSFET is a testament to ON Semiconductor's commitment to providing energy-efficient and reliable components for the modern electronics industry.

Key Features

  • Type: N-Channel
  • VDSS: 20V
  • RDS(on): 2.5 mΩ
  • ID: 65A
  • Package: TO-220
  • Power Dissipation: 75W

With its low on-state resistance (RDS(on)) of just 2.5 mΩ, the NTP65N02R offers exceptional efficiency, which is crucial for reducing power losses and improving overall system performance. The device is capable of handling continuous drain currents up to 65A, making it suitable for high-current applications.

The 20V drain-to-source breakdown voltage (VDSS) ensures that the MOSFET can handle significant voltage spikes without breaking down, providing a reliable solution for circuits that experience fluctuating voltages. Additionally, the NTP65N02R is housed in a robust TO-220 package, which not only facilitates heat dissipation but also contributes to its mechanical durability.

ON Semiconductor has equipped the NTP65N02R with advanced features such as fast switching speed, which is essential for applications that require quick response times. Moreover, the device boasts a power dissipation of 75W, allowing it to manage considerable amounts of power without overheating.

The NTP65N02R is not only powerful but also versatile. It is widely used in applications such as DC-DC converters, power management in computing and telecommunications, and automotive systems. Its reliability and efficiency make it an excellent choice for designers looking to optimize their power circuitry.

In conclusion, the ON Semiconductor NTP65N02R Power MOSFET is a superior component that offers a combination of high current capability, low on-resistance, fast switching, and a robust package. It is an ideal choice for engineers who need a reliable and efficient power switching solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4692 $58.6500
305+ $0.3850 $117.4250
465+ $0.3730 $173.4450
640+ $0.3610 $231.0400
830+ $0.3490 $289.6700
1,110+ $0.3128 $347.2080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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