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Same model may have multiple batches, images only for reference.
UMH5NTR Real Image
Same model may have multiple batches, images only for reference.

UMH5NTR

Part No UMH5NTR
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.15W UMT6
Datasheet
UMH5NTR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 56 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package UMT6
Win Source Part Number 036011-UMH5NTR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UMH5NTR CAD Model

Description

The Rohm Semiconductor 036011-UMH5NTR is a dual NPN pre-biased transistor with a frequency transition of 250MHz.

  • Frequency Transition: 250MHz
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE): 56 @ 5mA and 5V
  • Maximum Power Dissipation: 150mW
  • Mounting: Surface Mount Device (SMD)
  • Package: UMT6 case or package
  • Resistor-Base (R1): 22k ohms
  • Resistor-Emitter Base (R2): 22k ohms
  • Collector Cut-Off Current: 500nA
  • Maximum Vce (sat): 300mV @ 500μA and 10mA
  • Type: Discrete semiconductor product
  • Status: Not for new designs
  • Supply and Demand Status: Balanced

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