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Same model may have multiple batches, images only for reference.
SIHA21N60EF-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHA21N60EF-E3

Part No SIHA21N60EF-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHA21N60EF-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 176mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2030 pF @ 100 V
Power Dissipation (Max) 35W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHA21
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277872-SIHA21N60EF-E3
Ultra Librarian 3D Model Ultra Librarian SIHA21N60EF-E3 CAD Model

Description

The SIHA21N60EF-E3 is a discrete semiconductor product manufactured by Vishay Siliconix.

  • Type: N-channel MOSFET
  • Drain to Source Voltage: 600V
  • Continuous Drain Current: 21A @ 25°C
  • Applications: Power supplies, motor control, and lighting
  • Power Dissipation: 35W @ Tc
  • Gate Charge: 84nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.5568 $52.8976
15+ $7.0693 $106.0395
22+ $6.8255 $150.1610
32+ $6.3380 $202.8160
42+ $6.0942 $255.9564
52+ $5.8505 $304.2260
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 968 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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