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NTTFS4C13NTWG

Part No NTTFS4C13NTWG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7.2A 8WDFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 30 V 7.2A (Ta) 780mW (Ta), 21.5W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Manufacturer ON Semiconductor
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerWDFN
Case / Package 8-WDFN (3.3x3.3)
Family Name NTTFS4
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number NTTFS4C13NTWG-ND, NTTFS4C13NTWGOSTR, NTTFS4C13NTWGOSCT, NTTFS4C13NTWGOSDKR
Quantity per package 5000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 887834-NTTFS4C13NTWG
Ultra Librarian 3D Model Ultra Librarian NTTFS4C13NTWG CAD Model

Description

ON Semiconductor NTTFS4C13NTWG: A High-Performance Trench MOSFET

The NTTFS4C13NTWG is a cutting-edge, N-channel Power MOSFET developed by ON Semiconductor, a leader in energy-efficient innovations. This device is designed using proprietary trench technology, which significantly enhances its performance compared to traditional planar MOSFETs. The NTTFS4C13NTWG is an optimal solution for a wide array of power management applications, offering a combination of low on-resistance, high current capability, and exceptional thermal characteristics.

With a compact footprint, the NTTFS4C13NTWG is housed in a small, surface-mount 5x6mm² flat lead package, known as a WDFN8 package. This package is designed to provide excellent power dissipation and minimal parasitic inductance, which is crucial for high-speed switching applications. The device is also RoHS compliant, ensuring that it meets the latest environmental standards for electronic components.

The NTTFS4C13NTWG boasts a maximum continuous drain current (ID) of 30A, making it capable of handling high current loads with ease. Its low on-resistance (RDS(on)) of just 1.3mΩ at VGS = 10V ensures high efficiency, which is critical for reducing power losses in applications such as DC/DC converters, motor drives, and power supply circuits. Additionally, the device operates over a wide temperature range, maintaining performance even under extreme conditions.

Key Features:

  • Low RDS(on) of 1.3mΩ at VGS = 10V
  • High continuous drain current (ID) of 30A
  • Optimized for fast switching performance
  • WDFN8 package for enhanced thermal performance and space-saving design
  • 100% UVLO tested to ensure reliability
  • Environmentally friendly with RoHS compliance

Engineers and designers looking for a robust and efficient power management solution will find the NTTFS4C13NTWG MOSFET from ON Semiconductor to be an excellent choice. Its performance characteristics make it suitable for a range of high-efficiency applications, ensuring that end products meet the demands of power density and energy conservation.

Whether it's for power supplies, computing, or automotive applications, the NTTFS4C13NTWG offers the reliability and performance expected from a leading semiconductor manufacturer like ON Semiconductor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.6900 $59.1800
53+ $2.2072 $116.9816
82+ $2.1379 $175.3078
112+ $2.0686 $231.6832
145+ $2.0005 $290.0725
194+ $1.7937 $347.9778
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,570 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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