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NTTS2P02R2G

Part No NTTS2P02R2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.4A 8MICRO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 18nC @ 4.5V
Max Input Capacitance 550pF @ 16V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 780mW (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 2.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 119689-NTTS2P02R2G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTTS2P02R2G CAD Model

Description

ON Semiconductor NTTS2P02R2G Power MOSFET

The ON Semiconductor NTTS2P02R2G is a state-of-the-art Power MOSFET designed to meet the demands of modern electronic circuits. This device is part of ON Semiconductor's high-performance Trench MOSFETs, which are renowned for their low on-state resistance and minimal gate charge. The NTTS2P02R2G is an ideal choice for power management applications where efficiency and reliability are critical.

The NTTS2P02R2G boasts a compact design in a small surface-mount package, specifically the SOT-23 configuration. This makes it highly suitable for space-constrained applications that require a high power density. The MOSFET operates as a P-Channel device, with a drain-source voltage (Vdss) of -20V and a continuous drain current (Id) of -3.7A, which demonstrates its capability to handle significant power levels despite its small size.

One of the key features of the NTTS2P02R2G is its low threshold voltage, which allows for operation at lower gate voltages, hence reducing the power needed to drive the device. This characteristic is particularly beneficial in battery-operated devices where power conservation is essential. Additionally, the MOSFET's low RDS(on) ensures minimal conduction losses, further enhancing the overall efficiency of the system it is used in.

The device also includes built-in ESD protection, safeguarding the MOSFET from electrostatic discharges that can occur during handling or operation, thereby improving its reliability and lifespan. The NTTS2P02R2G is RoHS compliant, adhering to current environmental standards that restrict the use of hazardous substances in electronic components.

Applications for the NTTS2P02R2G are diverse and include power management tasks such as DC-DC conversion, load switching, and battery protection circuits. Its performance and small footprint make it suitable for portable electronics, power supplies, and other electronic systems where efficient power control is necessary.

In summary, the ON Semiconductor NTTS2P02R2G Power MOSFET is an exceptional component that offers a blend of efficiency, high performance, and compactness, making it an excellent choice for designers looking to optimize their power management solutions.

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