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FDP3682

Part No FDP3682
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 32A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 1250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 95W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 32A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 091511-FDP3682
Family Name FDP3682
Introduction Date June 11, 2002
ECCN EAR99
Country of Origin China, United States of America
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDP3682 CAD Model

Description

The FDP3682 MOSFET is a N-channel polarity transistor manufactured by Fairchild/ON Semiconductor. It is a Discrete Semiconductor Product.

  • Maximum Power Dissipation: 95W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current at 25°C: 6A (Ta), 32A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 28nC @ 10V
  • Maximum Input Capacitance: 1250pF @ 25V
  • Maximum Rds on at Id, Vgs: 36 mOhm @ 32A, 10V
  • Package: TO-220-3
  • Popularity: High
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,030 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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