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NTZD3152PT1H

Part No NTZD3152PT1H
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 0.43A SOT563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 430mA
Maximum Rds On at Id,Vgs 900 mOhm @ 430mA, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 2.5nC @ 4.5V
Max Input Capacitance 175pF @ 16V
Maximum Power Dissipation 250mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-563-6
Win Source Part Number 1084048-NTZD3152PT1H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTZD3152PT1H CAD Model

Description

The ON Semiconductor NTZD3152PT1H is a high-performance, dual N-channel MOSFET designed to deliver efficient power management and switching capabilities for a wide range of applications. This compact and energy-efficient device is an ideal choice for portable electronics, power management circuits, and other space-constrained applications where low on-resistance and minimal power loss are critical.

Key Features

  • Low On-Resistance: Featuring ultra-low on-resistance, the NTZD3152PT1H ensures minimal voltage drop across the device, leading to efficient operation and reduced heat generation.
  • Small Footprint: Housed in a small SOT-563 package, this MOSFET is designed for applications where PCB real estate is at a premium, without compromising on performance.
  • High-Speed Switching: The device supports fast switching speeds, which makes it suitable for high-frequency applications and reduces switching losses.
  • Dual N-Channel Configuration: The dual N-channel configuration allows for flexibility in design, enabling the integration of two independent N-channel MOSFETs in a single package for compact circuit designs.
  • Low Threshold Voltage: The low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, making it compatible with low-voltage logic levels and reducing power consumption.
  • RoHS Compliant: The NTZD3152PT1H is compliant with RoHS standards, ensuring that it meets the latest environmental regulations and is free from hazardous substances.

Applications

The versatility of the NTZD3152PT1H makes it suitable for a variety of applications, including but not limited to:

  • Power Management Systems
  • DC/DC Converters
  • Load/Power Switches
  • Battery Management Circuits
  • Portable Electronic Devices
  • Motor Control Circuits

In summary, the ON Semiconductor NTZD3152PT1H dual N-channel MOSFET is a reliable and efficient solution for designers looking to optimize their power management and switching systems. Its combination of low on-resistance, high-speed switching, and a space-saving package makes it a valuable component in modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
380+ $0.1533 $58.2540
920+ $0.1258 $115.7360
1,425+ $0.1219 $173.7075
1,960+ $0.1180 $231.2800
2,535+ $0.1140 $288.9900
3,390+ $0.1023 $346.7970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,000 pieces
MOQ: 380 pcs
Order Increment : 1 pcs
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