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NTZD3154NT1H

Part No NTZD3154NT1H
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.54A SOT563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 540mA
Maximum Rds On at Id,Vgs 550 mOhm @ 540mA, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 2.5nC @ 4.5V
Max Input Capacitance 150pF @ 16V
Maximum Power Dissipation 250mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-563-6
Win Source Part Number 1084049-NTZD3154NT1H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTZD3154NT1H CAD Model

Description

The NTZD3154NT1H is a high-performance, dual P-Channel Power MOSFET designed and manufactured by ON Semiconductor. This compact and efficient MOSFET is an ideal choice for power management applications where space is at a premium and power efficiency is a must.

Key Features:

  • Low On-Resistance: The NTZD3154NT1H boasts an exceptionally low on-resistance, which reduces power loss and improves overall efficiency. This feature makes it suitable for high-performance applications where minimal voltage drop is critical.
  • High Power and Current Handling: With the ability to handle a continuous drain current of up to 1.8 A, this MOSFET can manage significant power levels, making it versatile for various applications.
  • Dual MOSFET Configuration: The integration of two P-Channel MOSFETs in a single package allows for a more compact design, saving space on the PCB and simplifying the circuit design process.
  • Low Threshold Voltage: The device features a low threshold voltage that facilitates easy drive capability and is compatible with low-voltage logic levels.
  • ESD Protection: Built-in ESD protection enhances the reliability and longevity of the device by safeguarding it against sudden electrostatic discharges during handling and operation.

Applications:

The NTZD3154NT1H is suitable for a wide range of applications, including but not limited to:

  • Power management circuits
  • Battery-powered devices
  • Load/switching applications
  • Portable electronics
  • DC/DC converters

Package and Reliability:

The NTZD3154NT1H comes in a small SOT-563 surface-mount package, which is ideal for space-constrained applications. ON Semiconductor's commitment to quality ensures that this MOSFET meets the highest reliability standards, making it a trustworthy component for your power management needs.

Summary:

The ON Semiconductor NTZD3154NT1H dual P-Channel Power MOSFET stands out with its low on-resistance, high power handling, and compact dual configuration. It is a reliable and efficient solution for designers looking to optimize their power management systems in a variety of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2640 $58.7520
44+ $2.6784 $117.8496
67+ $2.5953 $173.8851
92+ $2.5110 $231.0120
119+ $2.4278 $288.9082
160+ $2.1760 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,410 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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