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NVB25P06T4G

Part No NVB25P06T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 27.5A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 27.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 1680pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 120W (Tj)
Maximum Rds On at Id,Vgs 82 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1084080-NVB25P06T4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NVB25P06T4G CAD Model

Description

ON Semiconductor NVB25P06T4G P-Channel MOSFET

The NVB25P06T4G from ON Semiconductor is a high-performance P-Channel Power MOSFET designed to deliver efficient power management and conversion for a wide range of applications. It is a part of ON Semiconductor's Power MOSFET portfolio, which is well-known for its reliability, efficiency, and thermal performance.

This MOSFET features a drain-source voltage (V<sub>DS) of -60V and a continuous drain current (I<sub>D) of -25A at 25°C, which makes it suitable for high-power applications. The device is engineered to minimize on-state resistance (R<sub>DS(on)) with a typical value of 47mΩ at V<sub>GS = -10V, ensuring low power losses and improved energy efficiency in operation.

The NVB25P06T4G is housed in a D2PAK (TO-263) package, which provides a robust and compact solution for PCB mounting. The package is designed for surface mount technology (SMT), allowing for automated assembly processes and high-density circuit designs. The device also features a ruggedized design that can withstand high energy pulses in the avalanche and commutation modes, which is critical for reliable operation under harsh conditions.

This MOSFET is also characterized by its fast switching speed, which is essential for reducing switching losses and improving performance in high-frequency applications. The device is optimized for use in switch mode power supplies (SMPS), DC-DC converters, motor drives, and other power-intensive applications where efficiency is paramount.

Additionally, the NVB25P06T4G is compliant with RoHS regulations, meaning it is free from hazardous substances such as lead, making it a more environmentally friendly option for electronic designs. Its low threshold voltage ensures easy drive capability, making it compatible with a wide range of driving circuits and controllers.

Overall, the NVB25P06T4G P-Channel Power MOSFET by ON Semiconductor is a reliable and efficient solution for designers looking to optimize their power systems with a high-quality component that delivers both performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.7129 $66.8516
9+ $13.7133 $123.4197
14+ $13.2848 $185.9872
18+ $12.8563 $231.4134
24+ $12.4278 $298.2672
32+ $11.1423 $356.5536
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Availability: 5,020 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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