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NVBG080N120SC1

Part No NVBG080N120SC1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1200V 30A D2PAK-7
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Win Source Part Number WS1204018-NVBG080N120SC1
Win Source Part Number Cross
Manufacturer onsemi
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series Automotive, AEC-Q101
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Ultra Librarian 3D Model Ultra Librarian NVBG080N120SC1 CAD Model

Description

The NVBG080N120SC1 is a state-of-the-art silicon carbide (SiC) N-channel MOSFET brought to you by ON Semiconductor, a company renowned for its innovative approach in power management and precision technology. This high-performance power MOSFET is designed to meet the rigorous demands of today's advanced electronic systems, offering exceptional efficiency, reliability, and thermal performance.

Key Features

  • High Voltage Capability: With a drain-to-source voltage (V<sub>DS) of 1200V, this MOSFET can handle high voltage applications with ease, making it ideal for power supply and conversion systems.
  • Low On-Resistance: The NVBG080N120SC1 boasts an ultra-low on-resistance (R<sub>DS(on)) of just 80 mOhms, which results in minimal conduction losses and improved overall efficiency.
  • High-Speed Switching: Designed for fast switching applications, this device features a low total gate charge (Q<sub>G) and reduced switching losses, contributing to higher performance in power conversion circuits.
  • Enhanced Thermal Performance: The SiC construction ensures superior thermal conductivity and the ability to operate at higher temperatures, extending the life of the product and the systems in which it is used.

Applications

The NVBG080N120SC1 is versatile and can be used in a variety of applications, including:

  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • Electric vehicle (EV) charging stations
  • High voltage DC/DC converters
  • Switch mode power supplies (SMPS)

Product Benefits

This MOSFET is a robust solution for designers looking to improve system performance while reducing energy consumption and heat generation. The NVBG080N120SC1 allows for smaller system sizes due to its high power density, and its ruggedness ensures reliability in even the most demanding environments.

Environmental and Quality Certifications

ON Semiconductor is committed to environmental stewardship and product quality. The NVBG080N120SC1 is manufactured in facilities that are compliant with international standards, ensuring both environmental friendliness and the highest level of quality.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.9124 $63.6496
9+ $13.0565 $117.5085
14+ $12.6484 $177.0776
19+ $12.2404 $232.5676
25+ $11.8324 $295.8100
33+ $10.6084 $350.0772
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,000 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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