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SCTW40N120G2VAG

Part No SCTW40N120G2VAG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 105mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1230 pF @ 800 V
Power Dissipation (Max) 290W (Tc)
Temperature Range - Operating -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Supplier Device Package HiP247™
Package / Case TO-247-3
Base Product Number SCTW40
Other Names 497-SCTW40N120G2VAG
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278142-SCTW40N120G2VAG
Ultra Librarian 3D Model Ultra Librarian SCTW40N120G2VAG CAD Model

Description

The SCTW40N120G2VAG is a state-of-the-art silicon carbide (SiC) power MOSFET brought to you by STMicroelectronics, a global semiconductor leader. This device is designed to meet the efficiency and reliability demands of modern high-performance power conversion systems.

Key Features

  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 1200V, this MOSFET is well-suited for applications requiring high voltage operation.
  • Low On-Resistance: The on-resistance (R<sub>DS(on)) is as low as 40 mΩ, which minimizes conduction losses and improves overall efficiency.
  • High-Speed Switching: The SCTW40N120G2VAG provides fast switching performance, which is essential for reducing switching losses in power conversion systems.
  • High-Temperature Operation: It is capable of operating at high temperatures, ensuring reliability and performance even under thermal stress.
  • Robust Body Diode: The device features a robust and fast body diode, which is crucial for handling hard commutation and reducing reverse recovery losses.

Applications

The SCTW40N120G2VAG is ideal for a wide range of power applications, including:

  • Electric Vehicle (EV) chargers
  • Switched Mode Power Supplies (SMPS)
  • Power factor correction (PFC) circuits
  • Uninterruptible Power Supplies (UPS)
  • High-performance inverters
  • Renewable energy systems, such as solar inverters and wind turbines

Advantages of Silicon Carbide

The use of silicon carbide in the SCTW40N120G2VAG MOSFET offers several advantages over traditional silicon-based devices. SiC provides higher efficiency, faster switching speeds, greater thermal conductivity, and improved reliability, particularly in high-temperature, high-frequency, and high-voltage applications. These benefits make the SCTW40N120G2VAG an excellent choice for designers looking to push the boundaries of power density, efficiency, and performance in their products.

By integrating the SCTW40N120G2VAG into your power conversion systems, you can expect reduced system losses, increased power density, and enhanced overall system reliability, contributing to a greener and more sustainable future.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $28.0662 $84.1986
6+ $23.0288 $138.1728
8+ $22.3091 $178.4728
11+ $21.5894 $237.4834
14+ $20.8698 $292.1772
19+ $18.7108 $355.5052
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 340 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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