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NVD5890NT4G-VF01

Part No NVD5890NT4G-VF01
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 24A (Ta), 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 4760pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4W (Ta), 107W (Tc)
Maximum Rds On at Id,Vgs 3.7 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1084115-NVD5890NT4G-VF01
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NVD5890NT4G-VF01 CAD Model

Description

The ON Semiconductor NVD5890NT4G-VF01 is a state-of-the-art power MOSFET designed for high-efficiency power management applications. This device is a testament to ON Semiconductor's commitment to providing innovative solutions that meet the ever-evolving demands of the electronics industry. With its compact footprint and robust design, the NVD5890NT4G-VF01 is ideal for a wide range of applications, including computing systems, telecommunication equipment, industrial machinery, and automotive electronics.

Key Features

  • Low On-Resistance: The device features a low on-resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency, making it suitable for high-performance power conversion applications.
  • High Current Handling: With its ability to handle high levels of continuous drain current (I<sub>D), this MOSFET can easily manage the demands of heavy-duty operations.
  • Advanced Trench Technology: Utilizing ON Semiconductor's advanced trench technology, the NVD5890NT4G-VF01 offers superior performance by reducing gate charge (Q<sub>g), which enhances switching speed and reduces power losses.
  • Thermal Management: The device comes in a thermally enhanced package, which aids in heat dissipation, ensuring stability and longevity even under high-temperature operating conditions.
  • RoHS Compliant: In line with global environmental standards, the NVD5890NT4G-VF01 meets RoHS compliance, ensuring that it is free from hazardous substances.

Applications

The versatility of the NVD5890NT4G-VF01 allows it to be used in a variety of applications. In DC-DC converters, it enhances efficiency; in motor control circuits, it provides reliable operation; and in power management systems, it ensures stable power delivery. Additionally, its robust performance makes it an excellent choice for load switching and power supply designs in both consumer and industrial electronics.

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NVD5890NT4G-VF01 is no exception. Each device undergoes rigorous testing to ensure it meets the high standards for reliability and performance that ON Semiconductor's customers have come to expect. This commitment to quality makes the NVD5890NT4G-VF01 a reliable choice for designers looking to create durable and efficient electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9313 $57.9390
75+ $1.5847 $118.8525
115+ $1.5352 $176.5480
160+ $1.4857 $237.7120
205+ $1.4361 $294.4005
270+ $1.2876 $347.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,800 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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