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NVGS3130NT1G

Part No NVGS3130NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4.2A 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 20.3nC @ 4.5V
Max Input Capacitance 935pF @ 16V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 600mW (Ta)
Maximum Rds On at Id,Vgs 24 mOhm @ 5.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6
Win Source Part Number 1084128-NVGS3130NT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NVGS3130NT1G CAD Model

Description

ON Semiconductor NVGS3130NT1G Overview

The NVGS3130NT1G is a high-performance, N-channel Power MOSFET produced by ON Semiconductor, a leading name in the field of energy-efficient innovations. This particular product is designed to cater to a wide range of applications, from power management to switching circuits, offering a blend of efficiency and reliability.

Key Features

  • Low On-Resistance: The NVGS3130NT1G boasts a low on-resistance, which means it has a minimal voltage drop across the device when conducting. This feature translates to less power loss and improved efficiency in your electronic designs.
  • High Threshold Voltage: With a high threshold voltage, this MOSFET ensures that there is less chance of unintentional turn-on due to noise, making it suitable for applications that require a robust and stable operation.
  • Fast Switching Speed: The device is designed for fast switching, reducing transition losses and improving performance in high-frequency applications.
  • ESD Protected Gate: Electrostatic discharge (ESD) can cause damage to electronic components. The NVGS3130NT1G comes with an ESD-protected gate to safeguard against such occurrences, thereby enhancing the longevity of the product.
  • Low Threshold Voltage: This characteristic makes the MOSFET easy to drive and control at lower voltages, which is particularly beneficial in low-voltage applications.

Applications

The NVGS3130NT1G is versatile and can be integrated into various circuit designs. It is ideal for:

  • Power management systems
  • DC/DC converters
  • Motor control circuits
  • Load switches
  • Battery management applications
  • Switching regulators

Package and Environmental Compliance

The NVGS3130NT1G is available in a compact SOT-23 package, making it suitable for space-constrained applications. It also complies with RoHS standards, ensuring that it meets the latest environmental requirements and is free from hazardous substances.

In conclusion, the NVGS3130NT1G from ON Semiconductor is an exceptional choice for designers looking for a MOSFET that offers both high performance and energy efficiency. Whether for power management or high-frequency switching, this component is engineered to deliver top-notch results while maintaining environmental consciousness.

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