ON Semiconductor NVHL082N65S3F - High-Performance Power MOSFET

The NVHL082N65S3F is a state-of-the-art power MOSFET brought to you by ON Semiconductor, a leading figure in the semiconductor industry. This product is designed to meet the rigorous demands of high-efficiency power conversion systems and applications. With a focus on reducing power losses and improving overall system reliability, the NVHL082N65S3F is an excellent choice for designers looking to optimize their power management solutions.

Key Features

• Advanced Technology: Utilizes ON Semiconductor's proprietary silicon carbide (SiC) technology to offer superior switching performance and high-temperature operation.
• High Voltage Rating: With a drain-to-source voltage (V<sub>DS) of 650V, this MOSFET can handle high voltage applications with ease, making it ideal for industrial, automotive, and energy systems.
• Low R<sub>DS(on): Features an extremely low on-resistance of 82 mΩ, which minimizes conduction losses and enhances efficiency.
• High Current Capacity: Capable of sustaining a continuous drain current (I<sub>D) of up to 98A, ensuring high current handling capabilities.
• Fast Switching Speed: The fast intrinsic diode with low reverse recovery charge (Q<sub>rr) ensures minimal switching losses and is suitable for high-frequency applications.
• Robust Package: Encased in a TO-247-3 package, known for its high power dissipation and mechanical robustness.
• Environmentally Friendly: This product is completely lead-free and RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability.

Applications

The NVHL082N65S3F is versatile and can be used in a variety of applications, including:

• Electric vehicle (EV) chargers
• Solar inverters
• Uninterruptible power supplies (UPS)
• Switch-mode power supplies (SMPS)
• High-voltage DC/DC converters

With its robust design and advanced capabilities, the NVHL082N65S3F from ON Semiconductor is a reliable and efficient solution for modern high-voltage power conversion needs. Its cutting-edge features provide the performance required to drive innovation in power electronics.