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NVMFD5852NLWFT1G

Part No NVMFD5852NLWFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 15A SO8FL  /  Mosfet Array 2 N-Channel (Dual) 40V 15A 3.2W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 15A
Rds On (Max) @ Id, Vgs 6.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Power - Max 3.2W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Base Product Number NVMFD5852
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names NVMFD5852NLWFT1GOSDKR,NVMFD5852NLWFT1G-ND,NVMFD5852NLWFT1GOSTR,NVMFD5852NLWFT1GOSCT
Standard Package 1,500
Win Source Part Number 1010186-NVMFD5852NLWFT1G
Ultra Librarian 3D Model Ultra Librarian NVMFD5852NLWFT1G CAD Model

Description

ON Semiconductor NVMFD5852NLWFT1G Overview

The NVMFD5852NLWFT1G is a high-performance, dual N-channel Power MOSFET developed by ON Semiconductor, a leading provider in energy-efficient innovations. This advanced power management component is designed to deliver efficiency and reliability for a wide range of applications, including computing, consumer electronics, and automotive systems. Its compact and robust package makes it an ideal choice for space-constrained environments that require high power density and low power dissipation.

Key Features

  • Low On-Resistance: The NVMFD5852NLWFT1G boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Current Capability: This MOSFET is capable of handling high currents, making it suitable for demanding applications that require robust power handling capabilities.
  • Power-SO8 FL Dual Cool Package: It features ON Semiconductor's innovative Power-SO8 FL Dual Cool package, which enables dual-sided cooling to significantly enhance thermal performance.
  • 100% Rg and UIS Tested: Each unit is thoroughly tested for gate charge and unclamped inductive switching to ensure reliability and performance under real-world conditions.

Applications

The versatility of the NVMFD5852NLWFT1G allows it to be used in a multitude of applications, including:

  • DC/DC converters for computing and telecom systems
  • Motor control circuits in automotive and industrial settings
  • Power management solutions for battery-operated devices
  • Load switches and power distribution systems

Technical Specifications

  • Configuration: Dual N-Channel
  • Drain-to-Source Voltage (V<sub>DS): 25V
  • Continuous Drain Current (I<sub>D): 8A
  • Power Dissipation (P<sub>D): 2.5W
  • Operating Temperature Range: -55°C to 150°C

The NVMFD5852NLWFT1G from ON Semiconductor represents a state-of-the-art solution for designers seeking to optimize the power efficiency and thermal management of their electronic systems. With its robust design and high-performance characteristics, it is an excellent choice for a wide array of power management applications.

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