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R6020JNXC7G

Part No R6020JNXC7G
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20A TO220FM  /  N-Channel 600 V 20A (Tc) 76W (Tc) Through Hole TO-220FM
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 234mOhm @ 10A, 15V
Vgs(th) (Max) @ Id 7V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 15 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V
Power Dissipation (Max) 76W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
Base Product Number R6020
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1019103-R6020JNXC7G
Ultra Librarian 3D Model Ultra Librarian R6020JNXC7G CAD Model

Description

The Rohm Semiconductor R6020JNXC7G is a high-quality N-Channel MOSFET transistor that can be used in a variety of applications.

  • Drain to Source Voltage: 600 V
  • Continuous Drain Current: 20A (Tc)
  • Rds On (Max) @ 10A, 15V: 234mOhm @ 10A, 15V

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