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NVMFD5853NT1G

Part No NVMFD5853NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 12A 8DFN / Mosfet Array 2 N-Channel (Dual) 40V 12A 3.1W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR),Cut Tape (CT)
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 12A
Rds On (Max) @ Id, Vgs 10mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1225pF @ 25V
Power - Max 3.1W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Base Product Number NVMFD5853
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names NVMFD5853NT1G-ND,ONSONSNVMFD5853NT1G,NVMFD5853NT1GOSTR,2156-NVMFD5853NT1G-OS,NVMFD5853NT1GOSCT,NVMFD5853NT1GOSDKR
Standard Package 1,500
Win Source Part Number 1194857-NVMFD5853NT1G
Ultra Librarian 3D Model Ultra Librarian NVMFD5853NT1G CAD Model

Description

ON Semiconductor NVMFD5853NT1G Power MOSFET

The NVMFD5853NT1G is a high-performance Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This product is designed to cater to a wide range of applications including power management, computing, and high-efficiency power conversion.

The NVMFD5853NT1G boasts a compact, dual N-channel design, which is encapsulated in a space-saving, surface-mountable, 8-Pin DFN package. This configuration allows for a reduction in board space without compromising on power handling and efficiency. With its advanced technology, this MOSFET achieves low on-resistance and a high continuous drain current, making it an excellent choice for applications that require high power density and efficiency.

Key Features:

  • Low RDS(on): The device offers exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency.
  • High Continuous Drain Current (ID): It supports a high continuous drain current, enabling the device to handle high-power applications with ease.
  • High Power Density: The NVMFD5853NT1G is capable of delivering high power in a small footprint, which is ideal for compact designs.
  • RoHS Compliant: This product is compliant with RoHS standards, ensuring that it meets global environmental and regulatory requirements.

Applications:

  • DC/DC Converters
  • Power Supply for CPU and GPU
  • Motor Drives
  • Battery Management Systems
  • Load Switches
  • Point of Load (POL) Modules

ON Semiconductor's NVMFD5853NT1G is a testament to the company's commitment to providing innovative, high-quality components for power-sensitive applications. With its outstanding performance characteristics and compact design, this Power MOSFET is an ideal solution for designers looking to enhance efficiency and reliability in their power management systems.

By integrating the NVMFD5853NT1G into your design, you can take advantage of ON Semiconductor's cutting-edge technology to achieve superior performance in a wide range of electronic products.

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