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NVMFD5877NLT1G

Part No NVMFD5877NLT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 6A 8SOIC / Trans MOSFET N-CH 60V 6A Automotive 8-Pin DFN EP T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel package
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 6A
Rds On (Maximum) @ Id, Vgs 39 mOhm @ 7.5A, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 540pF @ 25V
Power - Max 3.2W
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Package 8-PowerTDFN
Manufacturer Package 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Win Source Part Number 790869-NVMFD5877NLT1G
Popularity Medium
Supply and Demand Status Limited
Family Name NVMFD5877NL
Introduction Date February 25, 2011
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian NVMFD5877NLT1G CAD Model

Description

ON Semiconductor NVMFD5877NLT1G Overview

The ON Semiconductor NVMFD5877NLT1G is a state-of-the-art, high-performance Power MOSFET designed for a wide range of applications. This device aims to provide a combination of low on-resistance and high switching speed, making it an ideal choice for power management tasks within electronic systems.

Key Features

  • Low R<sub>DS(on): The NVMFD5877NLT1G boasts an exceptionally low drain-to-source on-resistance, which translates to reduced conduction losses and improved efficiency in power circuits.
  • High Current Capability: This MOSFET is capable of handling high currents, making it suitable for demanding applications that require robust power handling capabilities.
  • Power-SO8 Package: Encased in a compact Power-SO8 package, the NVMFD5877NLT1G offers a space-saving solution without compromising on power and performance.
  • Thermal Management: With an excellent thermal performance, this device ensures reliability even under high temperature operating conditions.

Applications

The versatility of the NVMFD5877NLT1G allows it to be used in various applications, including:

  • DC/DC Converters
  • Power Supply Modules
  • Motor Drives
  • Automotive Systems
  • Computing and Server Systems
  • Switching Regulators

Technical Specifications

Parameter Value V<sub>DS (Max) 30V I<sub>D (Max) 48A R<sub>DS(on) (Typ) 2.6mΩ Package Power-SO8

The NVMFD5877NLT1G from ON Semiconductor is a testament to the company's commitment to providing innovative solutions that meet the demands of modern electronic systems. With its robust design, high efficiency, and versatile application range, this Power MOSFET is an excellent choice for designers looking to optimize their power management strategies.

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Pricing & Ordering

Quantity Unit Price Ext. Price
29+ $1.7714 $51.3706
61+ $1.6572 $101.0892
94+ $1.6000 $150.4000
135+ $1.4857 $200.5695
175+ $1.4286 $250.0050
219+ $1.3715 $300.3585
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,610 pieces
MOQ: 29 pcs
Order Increment : 1 pcs
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