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NVMFS014P04M8LT1G

Part No NVMFS014P04M8LT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MV8 40V P-CH LL IN S08FL PACKAGE / P-Channel 40 V 12.5A (Ta), 52.1A (Tc) 3.6W (Ta), 60W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 12.5A (Ta), 52.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 420µA
Gate Charge (Qg) (Max) @ Vgs 26.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1734 pF @ 20 V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 60W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,500 pcs
Win Source Part Number 1383087-NVMFS014P04M8LT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS014P04M8LT1G CAD Model

Description

The ON Semiconductor NVMFS014P04M8LT1G is a high-performance, Power MOSFET designed to meet the rigorous demands of power conversion and switching applications. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions that help reduce the global environmental impact.

With a maximum V<sub>DS of 40V and a continuous drain current of 14A, this MOSFET can handle significant power levels, making it suitable for a wide range of applications, including DC-DC converters, motor drives, and power management circuits. The NVMFS014P04M8LT1G boasts an ultra-low on-resistance (R<sub>DS(on)) of just 8.8mΩ at V<sub>GS = 10V, which ensures high efficiency and low conduction losses in operation.

The product comes in a compact, surface-mount 5x6mm flat-lead package, which helps in reducing the overall footprint of the circuits it is used in. This package is also designed to provide excellent thermal performance, ensuring reliability even under high power and temperature conditions.

ON Semiconductor has equipped the NVMFS014P04M8LT1G with multiple protection features. It includes a robust body diode that can handle high surge currents, which is particularly useful in inductive switching applications. The device also offers enhanced ESD protection, safeguarding it from electrostatic discharge events during handling and operation.

For designers looking for a MOSFET that balances power handling, efficiency, and thermal performance, the NVMFS014P04M8LT1G is an excellent choice. Its state-of-the-art technology and compact design make it a versatile component for modern electronic systems that demand high efficiency and reliability.

Whether you are designing power supplies, battery management systems, or any other high-performance power conversion application, the NVMFS014P04M8LT1G from ON Semiconductor is a reliable and efficient solution that can help you achieve your design goals.

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4782 $59.7750
295+ $0.3924 $115.7580
460+ $0.3801 $174.8460
630+ $0.3679 $231.7770
815+ $0.3557 $289.8955
1,090+ $0.3188 $347.4920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,500 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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