ON Semiconductor NVMFS5C466NLT1G - Power MOSFET

The NVMFS5C466NLT1G is a high-performance, Power MOSFET brought to you by ON Semiconductor, a leading force in power efficiency and management solutions. This MOSFET is designed to meet a wide range of applications, offering a perfect blend of low on-resistance and high switching speed, making it suitable for high-efficiency power management tasks.

Key Features

• Low R<sub>DS(on): The device boasts an ultra-low on-resistance of typically 4.5 mΩ at V<sub>GS = 10 V, which translates to reduced conduction losses and improved overall efficiency in applications.
• High Continuous Drain Current: It can sustain a high continuous drain current of up to 100 A, allowing it to handle high power loads with ease.
• Power Dissipation: With a power dissipation of 125 W, this MOSFET can manage significant amounts of energy, making it suitable for demanding power applications.
• Single N-Channel: As a single N-Channel MOSFET, it offers simplicity in design and ease of integration into various circuit topologies.
• High Switching Speed: The device is optimized for fast switching, which is critical for reducing switching losses in high-frequency power supplies and converters.

Applications

The NVMFS5C466NLT1G is versatile and can be used in a broad range of applications, including:

• DC/DC Converters
• Motor Drives
• Power Management Systems
• Automotive Applications
• Synchronous Rectification
• Power Supply for CPU, GPU, and Memory

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 60 V Gate-to-Source Voltage (V<sub>GS) ±20 V Continuous Drain Current (I<sub>D) 100 A Power Dissipation (P<sub>D) 125 W Operating and Storage Temperature Range -55°C to +175°C

The NVMFS5C466NLT1G from ON Semiconductor is a robust and efficient solution for your power management and conversion needs, delivering reliability and performance that designers and engineers can trust.