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NVMFS5C612NLAFT1G

Part No NVMFS5C612NLAFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 38A/250A 5DFN / N-Channel 60 V 38A (Ta), 250A (Tc) 3.8W (Ta), 167W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 38A (Ta), 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.36mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6660 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 167W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1356925-NVMFS5C612NLAFT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS5C612NLAFT1G CAD Model

Description

ON Semiconductor NVMFS5C612NLAFT1G

The ON Semiconductor NVMFS5C612NLAFT1G is a cutting-edge power MOSFET designed to deliver high efficiency and performance for a wide range of applications. This N-channel MOSFET utilizes the latest technology to offer low on-resistance and minimal gate charge, making it an ideal choice for power management tasks where efficiency is paramount.

Key Features

  • Low R<sub>DS(on): The device boasts a low on-state resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Continuous Drain Current (I<sub>D): With a high continuous drain current capability, this MOSFET can handle significant power without overheating, making it suitable for high-power applications.
  • Fast Switching Speed: The NVMFS5C612NLAFT1G is designed for fast switching, reducing transition losses and improving performance in high-frequency power switching applications.
  • Low Gate Charge (Q<sub>g): A low gate charge ensures that the device can be turned on and off with minimal power loss, which is crucial for efficient operation in power converters and inverters.
  • Single Power Lead Frame: The product features a single power lead frame that enhances thermal performance and reliability, ensuring stable operation under varying conditions.

Applications

The NVMFS5C612NLAFT1G is versatile and can be used in a variety of applications, including:

  • DC/DC Converters
  • Power Supply Units (PSUs)
  • Motor Drives
  • Battery Management Systems
  • Automotive Applications
  • Load Switches

This MOSFET is housed in a compact, surface-mount package, making it suitable for space-constrained applications. The package is designed to optimize the thermal performance and minimize the footprint on the PCB. Whether you're designing power supplies, motor controllers, or any other application that requires efficient power handling, the ON Semiconductor NVMFS5C612NLAFT1G is an excellent choice that combines performance with reliability.

Quality and Environmental Compliance

ON Semiconductor is committed to environmental stewardship and the NVMFS5C612NLAFT1G complies with RoHS regulations, ensuring that it is free from hazardous substances. The product's quality and performance are backed by ON Semiconductor's rigorous testing and validation processes.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.8209 $52.3881
21+ $4.7762 $100.3002
33+ $4.6269 $152.6877
45+ $4.4777 $201.4965
58+ $4.3284 $251.0472
78+ $3.8806 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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