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NVMFS5C638NLWFT1G

Part No NVMFS5C638NLWFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 26A/133A 5DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number 2000036-NVMFS5C638NLWFT1G
Package Tape & Reel (TR);Cut Tape (CT)
Product Status Active
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 26A (Ta), 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2880 pF @ 25 V
Power Dissipation (Max) 4W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package 5-DFNW (4.9x5.9) (8-SOFL-WF)
Package / Case 8-PowerTDFN, 5 Leads
Win Source Part Number Cross
Category Discrete Semiconductor Products
Packaging Tape and Reel
Operating Temperature Range -55°C ~ 175°C (TJ)
FET Type N-Channel
Ultra Librarian 3D Model Ultra Librarian NVMFS5C638NLWFT1G CAD Model

Description

ON Semiconductor NVMFS5C638NLWFT1G Overview

The NVMFS5C638NLWFT1G is a high-performance, Power MOSFET produced by ON Semiconductor, a leader in power and signal management solutions. This MOSFET is designed to meet a wide range of applications requiring efficient power management and high reliability. With its advanced technology and robust design, the NVMFS5C638NLWFT1G is an ideal choice for engineers and designers working on automotive, industrial, and consumer electronics applications.

Key Features

  • Low On-Resistance: The device features an extremely low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D), allowing it to handle significant power without overheating.
  • Single N-Channel MOSFET: As a single N-Channel MOSFET, it provides a simple and efficient solution for switching applications.
  • Power Trench® Technology: The use of ON Semiconductor's proprietary Power Trench technology ensures optimal performance, particularly in terms of switching speed and energy efficiency.
  • Temperature Performance: The device is designed to operate over a wide temperature range, making it suitable for challenging environments.
  • Low Gate Charge: A low gate charge (Q<sub>G) reduces switching losses and improves the MOSFET's response time.

Applications

The NVMFS5C638NLWFT1G is versatile and can be used in various applications, including:

  • Automotive systems such as electric power steering, DC/DC converters, and motor drives
  • Power supply units for industrial and telecommunication equipment
  • High-efficiency DC/AC inverters for renewable energy systems
  • Battery management and protection circuits
  • Consumer electronics that require efficient power regulation

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NVMFS5C638NLWFT1G is no exception. It is manufactured under stringent quality control measures to ensure that it meets the high standards expected by customers. The device's reliability is further enhanced by its robust design, which is engineered to withstand harsh operating conditions commonly encountered in automotive and industrial settings.

In summary, the NVMFS5C638NLWFT1G from ON Semiconductor is a powerful and reliable component that offers efficiency and performance for a wide array of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.7528 $70.1120
90+ $1.4385 $129.4650
140+ $1.3932 $195.0480
195+ $1.3479 $262.8405
250+ $1.3027 $325.6750
335+ $1.1682 $391.3470
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,500 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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