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NVMFS5C673NLT3G

Part No NVMFS5C673NLT3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 5DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Discontinued
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V
Power Dissipation (Max) 3.6W (Ta), 46W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5
Standard Package 5,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 852558-NVMFS5C673NLT3G
Ultra Librarian 3D Model Ultra Librarian NVMFS5C673NLT3G CAD Model

Description

ON Semiconductor NVMFS5C673NLT3G

The NVMFS5C673NLT3G is a high-performance, Power MOSFET product from ON Semiconductor, designed to deliver efficient power management and conversion for a wide range of applications. This device is part of ON Semiconductor's portfolio of energy-efficient semiconductors, which are known for their reliability and innovative technology.

This N-channel MOSFET features a compact, surface-mounted design in a 5x6mm² footprint, making it suitable for space-constrained applications. It operates with a maximum continuous drain current of 30 A, allowing it to handle significant power levels. The NVMFS5C673NLT3G has a drain-to-source voltage (Vds) of 60V, which provides a good balance between performance and power consumption.

One of the key attributes of this MOSFET is its low on-resistance (Rds(on)), which minimizes conduction losses and improves overall efficiency. The low gate charge (Qg) and capacitance (Ciss) ensure fast switching performance, which is crucial for applications that require high-speed operation. The device also features a single pulse avalanche energy rating (Eas), which provides robustness against high-energy pulses.

The NVMFS5C673NLT3G is designed with advanced trench technology, which enhances its performance by reducing resistance and increasing power density. This makes it an excellent choice for power supply applications, DC-DC converters, motor drives, and other power-intensive electronic systems. The device is also RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability.

With its combination of high efficiency, ruggedness, and compact size, the NVMFS5C673NLT3G is a versatile component that can be deployed in a variety of industrial, automotive, and consumer electronics applications. It offers designers a reliable and high-performing solution for their power management challenges.

Overall, the NVMFS5C673NLT3G from ON Semiconductor is a testament to the company's dedication to providing cutting-edge semiconductor solutions that meet the demands of modern electronic devices, while maintaining a focus on energy efficiency and environmental responsibility.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3928 $55.7120
90+ $1.1429 $102.8610
140+ $1.1071 $154.9940
190+ $1.0714 $203.5660
245+ $1.0357 $253.7465
325+ $0.9286 $301.7950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,660 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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