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NVMFS5C682NLWFAFT1G

Part No NVMFS5C682NLWFAFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 8.8A/25A 5DFN / N-Channel 60 V 8.8A (Ta), 25A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta) , 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 16µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 25 V
Power Dissipation (Max) 3.5W (Ta) , 28W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5
Standard Package 1,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1337162-NVMFS5C682NLWFAFT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS5C682NLWFAFT1G CAD Model

Description

The NVMFS5C682NLWFAFT1G is a cutting-edge power MOSFET developed by ON Semiconductor, a renowned leader in energy-efficient innovations. This high-performance, N-channel MOSFET is designed for automotive applications and is perfectly suited for power conversion and management tasks within a vehicle's electronic systems.

Key Features

  • Low R<sub>DS(on): The device boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved efficiency in applications.
  • High Current Capability: With the ability to handle a substantial continuous drain current, this MOSFET can manage high-power applications with ease.
  • Enhanced Thermal Performance: The MOSFET is designed with an optimized package for superior thermal performance, ensuring reliability even under high temperature operating conditions.
  • Robust Design: Built to withstand the harsh environments of automotive applications, the MOSFET features a rugged design that meets stringent industry standards.
  • Single Pulse Avalanche Energy Rated: The device can handle high-energy pulses, which is critical for protecting circuits against unexpected voltage transients.

Applications

The NVMFS5C682NLWFAFT1G is ideal for a range of automotive applications, including:

  • Powertrain systems
  • Body control modules
  • Infotainment and telematics
  • DC/DC converters
  • Motor drives

Quality and Reliability

ON Semiconductor's commitment to quality is evident in the NVMFS5C682NLWFAFT1G, with the product being AEC-Q101 qualified, indicating its suitability for automotive applications. The device is also RoHS compliant, adhering to environmental standards that restrict the use of hazardous substances.

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 68V Continuous Drain Current (I<sub>D) 220A Power Dissipation (P<sub>D) 3.8W Operating Temperature Range -55°C to 175°C

In summary, the NVMFS5C682NLWFAFT1G from ON Semiconductor is a robust, high-performance MOSFET that offers efficient power management solutions for the demanding requirements of automotive electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0644 $58.5420
115+ $0.9971 $114.6665
175+ $0.9634 $168.5950
250+ $0.8960 $224.0000
325+ $0.8624 $280.2800
410+ $0.8287 $339.7670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,250 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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